BE SEM VI (EC)
DIV A,B
SYLLABUS FOR
REMEDIAL MID SEM EXAM
APRIL 2017
SUBJECT- 2161001 - VLSI TECHNOLOGY &
DESIGN
CH-1-INTRODUCTION
CH-2-FABRICATION OF MOSFETS
CH-3-MOS TRANSISTOR
CH-5-MOS INVERTER STATIC CHARATERISTICS
CH-6-MOS INVERTER SWITCHING
CHARATERISTICS
CH-7-COMBINATIONAL MOS LOGIC CKTS
CH-8-SEQUENTIAL MOS LOGIC CIRCUITS
CH-9-DYNAMIC LOGIC CIRCUITS
CH-10- CHIP I/P AND O/P CIRCUITS ( AS PER GTU SYLLABUS)
CH-15- DESIGN FOR TESTABILITY( AS PER GTU SYLLABUS)
BOOK:
FACULTY:
PROF.M.V.SHAH
PROF.A.B.NANDURBARKAR
PROF.P.P.PRAJAPATI
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